InP/ZnS / MANUFACTURING METHOD OF InP/ZnS CORE/SHELL QUATUM DOTS

摘要

Disclosed is a manufacturing method capable of forming a uniform and thick ZnS shell layer in an InP/ZnS quantum dot formed in a structure of an InP core and a ZnS shell surrounding the InP core to largely improve optical and chemical stability of the InP/ZnS quantum dot. According to the present invention, the manufacturing method comprises: a step (i) of reacting precursors of indium and phosphorous in a solvent to compose an InP quantum dot; a step (ii) of injecting precursors of zinc and sulfur into the InP quantum dot at a first temperature of 100 to 250°C, heating the mixture at a second temperature of up to 300°C, and performing annealing to form a shell layer of a ZnS quantum dot surrounding the InP quantum dot as a core; and a step (iii) of repeatedly performing the step (ii) for N times (N = 2) to grow the shell layer. In the step (ii), the precursors of Zn and sulfur are divided and injected through N times.