IMAGE SENSOR DEVICE STRUCTURE WITH DOPING LAYER IN LIGHT-SENSING REGION

摘要

According to the present invention, an image sensor device structure is provided. The image sensor device structure includes a substrate, and the substrate is doped with a first conductivity type. The image sensor device structure includes a photo-sensing region formed in the substrate, and the photo-sensing region is doped with a second conductivity type different from the first conductivity type. The image sensor device structure further includes a doped region extending into the photo-sensing region, wherein the doped region is doped with the first conductivity type. The image sensor device structure further includes a plurality of color filters formed on the doped region.