How to prevent charge transfer to bulk silicon for nanowire and nano slab processing

摘要

A method of manufacturing a semiconductor device includes providing a substrate having a layered pin structure thereon. The layered pin structure includes a base pin portion, a sacrificial portion provided on the base pin portion, and a channel portion provided on the sacrificial portion. A doping source film is provided on the substrate over the layered pin structure and a doping material is diffused from the doping source film to the layered pin structure portion other than the channel region to form a diffusion doped region . An isolation material is provided on the substrate over at least the diffusion doped region of the layered pin structure.