Improved hydrogen passivation to mitigate hydrogen induced recombination (HIR) and surface passivation degradation in PV devices

摘要

The present invention provides a method for manufacturing a photovoltaic device. In particular, the present invention relates to the use of hydrogen during the manufacture of photovoltaic devices for passivating defects in silicon and dealing with photo-induced degradation. The method of the present invention utilizes the generation and handling of hydrogen in a neutral or charged state to optimize defect passivation. Some methods include heat treatment, illumination with sub-bandgap photons, defects in the silicon to control the electric field or the state of charge or hydrogen, transfer of hydrogen to a different location in the device, or the use of hydrogen remaining at a particular location do.