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Method of forming a conformal epitaxial semiconductor cladding material over a fin field effect transistor (FINFET) device
Method of forming a conformal epitaxial semiconductor cladding material over a fin field effect transistor (FINFET) device
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机译:在鳍式场效应晶体管(FINFET)器件上形成共形外延半导体覆层材料的方法
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摘要
The present disclosure generally relates to devices having conformal semiconductor cladding materials and methods of forming the devices. The cladding material is a silicon germanium epitaxial material. The cladding material may be deposited to a smaller thickness than cladding materials formed by conventional deposition / etching techniques.
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