High performance ultraviolet sensor based on nanorod with transistor structure and method

摘要

The present invention relates to an element ultraviolet-ray sensor for sensing high sensitive ultraviolet light with a transistor structure including a nanorod and a manufacturing method thereof and, more specifically, to an ultraviolet-ray sensor which has a nanostructure increasing absorption of an ultraviolet area and measures ultraviolet light with the high sensitivity by applying a transistor structure and a manufacturing method thereof. According to the present invention, by combining a nanostructure and a transistor structure with respect to the ultraviolet measurement, the light intensity may be sensed even when the light intensity is small, thereby providing an advantage of increasing the overall sensitivity of the ultraviolet sensor. In addition, by applying a nanorod (preferably zinc oxide nanorod) and the transistor structure to the ultraviolet sensor structure, the ultraviolet sensor may measure with high-sensitivity while improving the absorption characteristics of the ultraviolet light.