High performance ultraviolet sensor based on nanorod with transistor structure and method

摘要

The present invention relates to a highly sensitive ultraviolet sensing element type ultraviolet sensor of a transistor structure including a nanorod and a method for manufacturing the same. The present invention relates to a high-sensitivity ultraviolet-sensing element type ultraviolet sensor of a transistor structure including such a nanorod and a method of manufacturing the same. According to the present invention, the combination of the nano-structure and the transistor structure in the UV measurement can be detected even when the light intensity is small to provide the advantage of improving the sensitivity of the overall UV sensor. In addition, by applying a nanorod (preferably zinc oxide nanorod) and a transistor structure to the planar two-terminal ultraviolet sensor structure, it is possible to provide an ultraviolet sensor capable of high-sensitivity measurement while improving the absorption characteristics of ultraviolet light.