BJT strong-ARM A Bipolar Junction Transistor BJT Control Strong-ARM Amplifier

摘要

The present invention provides a strong-ARM latch amplification circuit for generating a sensing detection voltage. A block of the strong-ARM latch amplification circuit comprises a strong-ARM amplification unit (700) for generating a sensing detection voltage, a CLK generation unit (701), a sensor unit (702), and a surge current protection unit (712). An S_OUT signal input transistor (706) is a transistor element for inputting an S_OUT signal of the sensor unit (702). An S_REF signal input sensing detection voltage generation transistor (707) is the transistor element for inputting an S_REF signal of the sensor unit (702). The S_REF signal input sensing detection voltage generation transistor (707) includes a detection resistor (720) and a BJT transistor element for inputting an S_REF signal of the sensor unit (702).