In NiGe -- MOSFET CONTAINING INDIUM-DOPED NiGe ELECTRODES AND METHOD OF FABRICATING THEREOF

摘要

According to an embodiment of the present invention, a metal-oxide-semiconductor field effect transistor (MOSFET) comprises: a Ge substrate; a gate oxide layer formed on the Ge substrate; a gate formed on the gate oxide layer; and a source electrode and a drain electrode formed on the Ge substrate and spaced apart from each other. The source electrode and the drain electrode include: a Ge layer doped with indium; and a NiGe layer formed on the Ge layer doped with indium.