METHOD FOR FORMING TUNGSTEN DISULFIDE THIN FILM BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION

摘要

The present invention relates to a method for forming a tungsten disulfide thin film by plasma enhanced atomic layer deposition. A method for forming a tungsten disulfide thin film according to the present invention comprises: a step of supplying W(CO) 6, which is a tungsten precursor on a substrate; purging the tungsten precursor; supplying hydrogen sulfide (H_2S) as reaction gas; and purging the reaction gas. In the step of supplying of the reaction gas, a tungsten disulfide (WS_2) thin film is directly formed, by using plasma, on the substrate without further subsequent processes.