FLIP TYPE WHITE GAN LIGHT EMITTING DIODE HAVING ALGAINP YELLOW LIGHT COMPENSATION UNIT AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a white light emitting diode and a manufacturing method thereof and, more specifically, to a flip type white GaN light emitting diode of which a manufacturing process is simple and a manufacturing method thereof. According to the present invention, the flip type white light emitting diode comprises: a sapphire substrate; an AlGaInP-based light compensation unit formed on an upper part of the sapphire substrate; a GaN light emitting unit formed on a lower part of the sapphire substrate; and an etching unit exposing an upper limitation layer formed on one side of the GaN light emitting unit, wherein the GaN light emitting unit outputs a blue light by applied power, the AlGaInP-based light compensation unit outputs a yellow light by the outputted blue light from the GaN light emitting unit, and the diode outputs a white light by the blue light and the yellow light.;COPYRIGHT KIPO 2019