SUBSTRATE PROCESSING METHOD FOR SELECTIVE FILM FORMATION FOR RAISED AND RECESSED FEATURES USING DEPOSITION AND ETCHING PROCESSES

摘要

Embodiments of the present invention provide a processing method for selective film formation for raised and recessed features using deposition and etching processes. According to one embodiment, the method includes the steps of providing a substrate having recessed features having sidewalls and a bottom, forming a recessed feature in the recessed feature and a field region around the opening of the recessed feature, field region, wherein the film is deposited non-conformally to have a greater film thickness on the bottom than on the sidewalls and field regions. The method includes the steps of: etching the film in the absence of a plasma in an atomic layer etch (ALE) process, wherein the etching comprises thinning the film on the bottom and removing the film from the sidewalls and field regions; And repeating the etching and etching steps at least once.