Various embodiments include an apparatus having at least two resistance change memory (RCM) cells. In one embodiment, the apparatus includes at least two electrical contacts connected to each of the RCM cells. The memory cell material is disposed between each pair of electrical contacts connected to each of the RCM cells. The memory cell material may form a conductive path between the electrical contacts, wherein at least a portion of the memory cell material is between at least two of the at least two electrical contacts electrically connected to each of the at least two RCM cells And is configured to cross-connect the conduction paths. Additional apparatus and methods are described.
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