Permutational memory cells

摘要

Various embodiments include at least one resistance change memory (RCM) cell, In one embodiment, three or more pairs of electrical contacts are coupled to the at least one RCM cell. A first portion of the pairs are arranged laterally to one another in a first grouping and a second opposing portion of the pairs are arranged laterally to one another in a second grouping. A memory cell material is disposed between opposing sides of the pairs of the three or more electrical contacts. The memory cell material is configured to form a conductive pathway between one or more of the pairs, with each of the three or more pairs being configured to be accessed individually for at least one operation including program, erase, and read operations. Additional apparatuses and methods are described.