Residual stress free joined SiC ceramics and the processing method of the same

摘要

The present invention relates to a silicon carbide bonded body and a method of manufacturing the same, and more particularly, to a method of manufacturing a silicon carbide bonded body, comprising the steps of: sintering a silicon carbide substrate constituting a bonded body; Preparing a silicon carbide preform by interposing an un-sintered silicon carbide bonding agent having the same composition as the silicon carbide substrate between at least two substrates selected from the sintered silicon carbide substrates; And a step of heat-treating the silicon carbide pre-bonded body to produce a silicon carbide bonded body, and a method of manufacturing the silicon carbide bonded body. INDUSTRIAL APPLICABILITY According to the present invention as described above, it is possible to produce a bonded body having no residual stress by using a bonding agent conforming to the composition of the silicon carbide base material. Therefore, the carbonaceous base material having high strength in the range of 65 to 190% Silicon bond can be manufactured.