(A) placing an Ag layer comprising silver (Ag) on a substrate; The substrate on which the Ag layer is disposed is heated to 300 to 400 DEG C and is passed through a first evaporation source containing indium (In), gallium (Ga) and chalcogenide elements to deposit a first thin film on the substrate Step (B); (C) heating the substrate to 430 to 500 DEG C and passing the first thin film to a second thin film by passing the thin film to a second evaporation source including copper (Cu) and a chalcogenide element; And (D) passing the substrate through a third evaporation source including In, Ga and a chalcogenide element to convert the second thin film into a third thin film.
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