A semiconductor device including structure in which a plurality of distributed power amplifiers are power-combined and a manufacturing method for the same

摘要

According to a part of an embodiment of the present invention, disclosed is a semiconductor device having a structure coupling multiple distributed power amplifiers with power which comprises: a first gate line formed by connecting gate electrodes of multiple transistors included in a first distributed power amplifier among the multiple distributed power amplifiers; and a first drain line formed by connecting drain electrodes of the multiple transistors included in the first distributed power amplifier. Each of the first gate line and the first drain line can be shared with at least one of a second gate line and a second drain line of a second distributed power amplifier adjacent to the first distributed power amplifier among the multiple distributed power amplifiers.