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机译:SiGe 0.12-
Univ Calif San Diego, Elect & Comp Engn Dept, La Jolla, CA 92093 USA;
Univ Calif San Diego, Elect & Comp Engn Dept, La Jolla, CA 92093 USA;
E-band; heterojunction bipolar transistor (HBT); integrated circuits (IC); millimeter-wave (mm-wave); power amplifier (PA); silicon germanium (SiGe);
机译:窄脊
机译:具有0.18-
机译:
机译:24.1具有多主分布式有源变压器功率组合的24至30GHz瓦特级宽带线性Doherty功率放大器,支持5G NR FR2 64-QAM,平均P
机译:混合