DIODE SHOTTKY

摘要

Use: to create Schottky-based semiconductor diodes based on silicon, silicon carbide. The essence of the utility model lies in the fact that the Schottky diode consists of epitaxial nn-structure, p-type conductivity security element around the Schottky contact, Schottky contact, protective layer, adhesive layer and layer for connection with the case output, the layer for connection with the case output is made from an element with a relative atomic mass of at least 190 amu and thickness from 37 microns to 47 microns. EFFECT: provision of the possibility of increasing the resistance of the Schottky diodes to the effects of HRC at operating voltages of reverse bias. 6 Il.