CHARGE CARRIERS IN THE SEMICONDUCTOR STRUCTURE MOBILITY NON-DESTRUCTIVE MEASURING METHOD

摘要

FIELD: measuring equipment.;SUBSTANCE: invention relates to the measuring equipment, can be used for the charge carriers in the semiconductor structures local area local mobility determining in the semiconductor devices manufacturing and testing process. In the semiconductor structure charge carriers mobility measuring non-destructive method, which consists in the structure placement in the quasi-uniform magnetic field, SHF radiation application thereto through the transmission line and the SHF power attenuation in the semiconductor structure measuring in the absence of a magnetic field and with one of the magnetic induction vector directions, determining the SHF losses, calculating the charge mobility therein according to the invention, the SHF radiation supply is carried out using at least two probes for the near field creation, distance between the probes ends is chosen not exceeding 1/10⁴ of the SHF radiation wavelength, the structure under study is placed in the near field range at a distance from the SHF radiation source not exceeding 1/10 of the wavelength in the used transmission line, so that the plane in which they are located, was perpendicular to the magnetic induction vector, additionally measuring the SHF power attenuation with opposite to the induction vector first direction, at that, additionally calculating the losses with the induction vector opposite direction, calculating the mobility value for the induction vector opposite direction, and determining the charge carriers mobility by the formula: µ=(µ₊+µ_-)/2, where µ₊ and µ_- is the charge carriers mobility for the magnetic induction vector two opposite directions.;EFFECT: invention enables extension in the charge carriers mobility measuring non-destructive method functionality by enabling the possibility of the charge carriers mobility profile constructing during the semiconductor structures scanning and the possibility of the charge carriers average mobility non-destructive measurement in the semiconductor structures with highly conductive outer layers inner layers.;1 cl, 4 dwg