METHOD FOR ION-BEAM SYNTHESIS OF GALLIUM NITRIDE IN SILICON

摘要

FIELD: chemistry.;SUBSTANCE: invention relates to nanotechnology and specifically to methods for ion-beam synthesis of gallium nitride inclusions in silicon and can be used in making optoelectronic and microelectronic devices of a new generation. Method of ion-beam synthesis of gallium nitride in a silicon plate involves sequential main implantation of nitrogen and gallium ions into a silicon plate. First, silicon nitride layer is synthesized in silicon plate by preliminary implantation of nitrogen ions with dose in range of 3⋅10¹⁶ at/cm² – 5⋅10¹⁷ at/cm², with nitrogen ion energy providing the average projected range of nitrogen ions is less than the average projected range of nitrogen and gallium ions with successive main implantation, and subsequent thermal annealing in an inert atmosphere at temperature of 900–1200 °C for 15–60 minutes. That is followed by sequential main implantation of nitrogen and gallium ions with a dose in range of 5⋅10¹⁶at/cm² – 5⋅10¹⁷ at/cm² and subsequent thermal annealing in inert atmosphere at temperature 700–900 °C for 30–60 minutes or at temperature 800–1000 °C in mode of fast thermal annealing. In particular cases of implementation of the invention, successive main implantation of nitrogen and gallium ions is carried out in direct or reverse sequence. After consecutive basic implantation of nitrogen and gallium ions and subsequent thermal annealing in an inert atmosphere, nitrogen ions are implanted with energy, equal to energy of nitrogen ions with successive main implantation, with dose, at which concentration of nitrogen ions is equal to or greater than concentration of gallium atoms in elementary gallium.;EFFECT: higher efficiency of formation of inclusions of gallium nitride phase due to reduced degree of output of implanted Ga from silicon plate, wider range of technical means of synthesis of gallium nitride in silicon using widely available serial standard implantation equipment, well compatible with technology of processing silicon.;3 cl, 5 dwg, 1 ex