Integrated circuits with a semiconductor device in thin-film SOI technology and method for producing the same

摘要

Integrated circuit with: a semiconductor device in thin film silicon on insulator technology comprising: a semiconductor substrate (112) of a first conductivity type, an insulator layer (114) and a semiconductor layer (116), wherein the insulator layer (114) is disposed on the semiconductor substrate (112) and the semiconductor layer (116) is disposed on the insulator layer (114); a first semiconductor layer structure (142) in the semiconductor layer (116); a second semiconductor layer structure (144) in the semiconductor layer (116) separated from the first semiconductor layer structure (142) and laterally spaced; a first semiconductor substrate structure (132) of a second conductivity type inverse to the first conductivity type disposed in the semiconductor substrate (112) under the first semiconductor layer structure (142); a second semiconductor substrate structure (134) of the second conductivity type disposed in the semiconductor substrate (112) below the second semiconductor layer structure (144) and laterally spaced from the first semiconductor substrate structure (132); and a third semiconductor substrate structure (133) of the first conductivity type which underlies the first semiconductor layer structure (142) in the semiconductor substrate (114) is disposed and otherwise surrounded by the first semiconductor substrate structure (132); wherein the first semiconductor substrate structure (132), the semiconductor substrate (112) and the second semiconductor substrate structure (134) form a bipolar transistor structure, wherein the third semiconductor substrate structure (133) and the first semiconductor layer structure (142) are connected to the same first voltage potential (136), and wherein the first semiconductor substrate structure (132), the second semiconductor substrate structure (134) and the second semiconductor layer structure (144) are connected to the same second voltage potential (138).