A method of depositing a C-doped AlN layer on a silicon substrate and a semiconductor device constructed of such a layer structure

摘要

The invention relates to a method for depositing a layer (2) of elements of the III-V main group on a silicon substrate (1), wherein the substrate (1) is heated in a process chamber (10) of a CVD reactor to a process temperature and gaseous III- or V-starting materials (13, 14), which contain the elements of the III and V main group are introduced into the process chamber (10) are chemically decomposed there and the decomposition products directly on the substrate surface a III-V layer form. In order to compensate for an n-doping due to a diffusion of silicon into the layer, a carbon-containing gaseous starting material (15) is additionally introduced into the process chamber (10). A semiconductor device produced by this method has a nucleation layer (2) applied directly to the substrate (1) doped with both silicon and carbon.