HIGH POWER SEMICONDUCTOR LASER

摘要

The embodiments of the present disclosure may relate to a hybrid distributed feedback (DFB) silicon laser wherein light propagates through the DFB laser along a length of the DFB laser. The DFB laser may include a mesa having a current channel extending from the first side of the mesa to the second side of the mesa. At a first location along the length of the DFB laser, the current channel may have a first width and / or the mesa may have a second width. At a second location along the length of the DFB laser, the current channel may have a third width and / or the mesa may have measured a fourth width in a direction perpendicular to the length of the DFB laser. Other embodiments may be described and / or claimed.