Multi - state - program, the controlled weak boosting for a non-volatile memory is used

摘要

More - state - programming of non-volatile memory cells, wherein cells, the various target states to be programmed, at the same time be programmed, by modulating the programming speed of each state with the use of a controlled amount of state - dependent, the boosting carried out in their respective channels. In one example, the channel - boosting by using a multi - stairs - word line ramp in connection with the lifting of the voltage on bit lines to a time based on the target state of the corresponding memory cell controlled.n="79"