A new multitime programmable non-volatile memory cell using high voltage NMOS

摘要

A new multitime programmable (MTP) non-volatile memory (NVM) cell using high voltage NMOS is proposed. A PMOS transistor is used for programming, erasing, and reading, and a high voltage NMOS is used for selecting the memory cell. The memory cell has fewer number of transistors and terminals compared with the typical conventional memory cell. This reduces the area consumption and simplifies the implementation of memory's external circuit. In addition, the subthreshold swing (SS) of the memory cell is improved for larger coupling ratio. Experimental investigation on transfer characteristics, endurance, retention, and threshold voltageVTHshift and leakage current of the high voltage NMOS of the memory cell are presented. The experimental endurance behaviour of the proposed memory cell is superior to the conventional memory cell.