首页> 中文期刊> 《纳米研究(英文版)》 >Non-volatile programmable homogeneous lateral MoTe2 junction for multi-bit flash memory and high-performance optoelectronics

Non-volatile programmable homogeneous lateral MoTe2 junction for multi-bit flash memory and high-performance optoelectronics

         

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  • 来源
    《纳米研究(英文版)》 |2020年第12期|3445-3451|共7页
  • 作者单位

    State Key Laboratory of Precision Measurement Technology and Instruments School of Precision Instruments and Opto-electronics Engineering Tianjin University No.92 Weijin Road Tianjin 300072 China;

    State Key Laboratory of Precision Measurement Technology and Instruments School of Precision Instruments and Opto-electronics Engineering Tianjin University No.92 Weijin Road Tianjin 300072 China;

    State Key Laboratory of Precision Measurement Technology and Instruments School of Precision Instruments and Opto-electronics Engineering Tianjin University No.92 Weijin Road Tianjin 300072 China;

    State Key Laboratory of Precision Measurement Technology and Instruments School of Precision Instruments and Opto-electronics Engineering Tianjin University No.92 Weijin Road Tianjin 300072 China;

    State Key Laboratory of Precision Measurement Technology and Instruments School of Precision Instruments and Opto-electronics Engineering Tianjin University No.92 Weijin Road Tianjin 300072 China;

    State Key Laboratory of Precision Measurement Technology and Instruments School of Precision Instruments and Opto-electronics Engineering Tianjin University No.92 Weijin Road Tianjin 300072 China;

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