FERROELECTRIC MATERIAL, MEMS COMPONENT WITH A FERROELECTRIC MATERIAL, MEMS DEVICE WITH A FIRST MEMS COMPONENT, METHOD FOR PRODUCING A MEMS COMPONENT, AND METHOD FOR PRODUCING A CMOS COMPATIBLE MEMS COMPONENT

摘要

A mixed crystal ferroelectric material comprising AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected so that a direction of a polarity of the ferroelectric material can be switched by applying a switching voltage. The switching voltage is below a breakdown voltage of the ferroelectric material.