SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL DOPED WITH SMALL AMOUNT OF VANADIUM, SUBSTRATE PREPARED THEREFROM, AND PREPARATION METHOD THEREFOR

摘要

The present application discloses a semi-insulating silicon carbide single crystal doped with a small amount of vanadium, a substrate and a preparation method thereof, and belongs to the field of semiconductor materials. The semi-insulating silicon carbide single crystal comprises shallow-energy-level impurities, a low-concentration deep-energy-level dopant, and a very small amount of intrinsic point defects; wherein, the shallow-energy-level impurities are compensated by the deep-energy-level dopant and the intrinsic point defects together, a concentration of the deep-energy-level dopant is lower than a concentration of a deep-energy-level dopant in a doped semi-insulating silicon carbide single crystal; a concentration of the intrinsic point defects is a primary concentration of intrinsic point defects in the silicon carbide single crystal at room temperature, and stability of electrical properties of the silicon carbide single crystal is not affected by the concentration of the intrinsic point defects. The semi-insulating silicon carbide single crystal has a highly stable resistivity and has high resistivity uniformity. The silicon carbide single crystal substrate prepared from the silicon carbide single crystal has high resistivity uniformity and a low stress, so that the silicon carbide single crystal substrate has excellent surface quality, so as to guarantee stability and consistency of subsequent epitaxial quality.