METHOD FOR MANUFACTURING AN OPTOELECTRONIC INFRARED EMITTING DEVICE COMPRISING AN ACTIVE LAYER BASED ON GERMANIUM-TIN

摘要

The invention relates to a method for manufacturing an optoelectronic device (1) for emitting infrared radiation (lambda2), comprising the following steps: i) making a first stack (10) comprising: o a source luminous (11) excitation, o a first bonding sublayer (17) made of a metallic material chosen from gold, titanium and copper, ii) production of a second stack (20) comprising: o an active layer (23) based on infrared re-emitting GeSn (lambda2), obtained by epitaxy at an epitaxy temperature (T sub epi /sub), o a second bonding sublayer (25) made of said metallic material, iii) determination of an assembly temperature (Tc) between an ambient temperature (T sub amb /sub) and said epitaxy temperature, to within 10%, such that a surface energy of direct bonding of said metallic material is greater than or equal to 0.5 J / m sup 2 /sup; iv) enough mblage by direct bonding, at said assembly temperature, of said stacks.