PROCESS FOR FABRICATING AN OPTOELECTRONIC DEVICE FOR EMITTING INFRARED LIGHT COMPRISING A GeSn-BASED ACTIVE LAYER

摘要

The invention relates to a process for fabricating an optoelectronic device (1) for emitting infrared radiation, comprising the following steps:i) producing a first stack (10) comprising: alight source (11),a first bonding sublayer (17) made from a metal of interest chosen from gold, titanium and copper,ii) producing a second stack (20) comprising: a GeSn-based active layer (23) obtained by epitaxy at an epitaxy temperature (T_epi),a second bonding sublayer (25) made from said metal of interest,iii) determining an assembly temperature (Tc) substantially comprised between an ambient temperature (T_amb) and said epitaxy temperature (T_epi), such that a direct bonding energy per unit area of said metal of interest is higher than or equal to 0.5 J/m²;iv) joining, by direct bonding, at said assembly temperature (Tc), said stacks (10, 20).