METHOD OF DEPOSITING CARBON-CONTAINING FILM INCLUDING NO SILICON AS GAP-FILLING LAYER THROUGH PULSE PLASMA-ASSISTED DEPOSITION

摘要

PROBLEM TO BE SOLVED: To generally provide a method of depositing a carbon-containing film including no silicon as a gap-filling layer in a trench through pulse plasma-assisted deposition according to the present invention.;SOLUTION: A C-containing film having filling capability and including no silicon can be achieved by forming a vapor-phase viscous polymer by causing Ar, He or N₂ plasma to strike in a chamber filled with a volatile hydrocarbon precursor which can be polymerized within a specific parameter range principally prescribing partial pressure of a precursor during plasma striking and wafer temperature.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2020,JPO&INPIT