An indium compound and a method for forming an indium-containing film using the indium compound.

摘要

PROBLEM TO BE SOLVED: To provide an indium compound and an indium-containing film forming method capable of using an indium compound without performing a special pretreatment and enabling high-throughput indium-containing film forming by a high-temperature ALD method. SOLUTION: The indium-containing film forming method includes (a) a step of arranging a substrate in a chamber, and (b) a step of introducing a gas containing an indium compound represented by the following general formula (1). c) A first purge step, (d) a step of introducing an oxygen-containing gas, and (e) a second purge step are included, and steps (b) to (e) are at temperatures of 225 ° C. or higher and 400 ° C. or lower. It is characterized in that it is repeated until a desired thickness of the indium-containing film is obtained. In (C5R1xH (5-x)) ... (1) (Here, in the general formula (1), x is an integer of 1 or more and 5 or less, and R1 independently has 1 or more carbon atoms. It is a hydrocarbon group of 8 or less.) [Selection diagram] FIG.