HIGH-DENSITY PLASMA CVD FILMS OF ALUMINIUM, GALLIUM AND INDIUM NITRIDES FROM COORDINATION COMPOUNDS OF METALS

摘要

The need for obtaining of films of aluminum nitrides, gallium and indium considerably has increased recently in view with perspective of using of their electroluminescent and photoelectric properties. One of effective methods of pinch of productivity of precipitation processes is high-density plasma chemical vapor deposition (HDP CVD). One of this method variants, is implemented by us in setting HF of plasma 13,65 MHz with the help of an evaporator - ionizing agent. Between a substrate and evaporator - ionizing agent there is a potential difference 500-1000 Volts. In an evaporator - ionizing agent the solid reagents (hexamethylsilasanates, enamineacetonates of metals) seat. The ionic stream is provided with an electric field. The kinetics and mechanism of precipitation in such requirements is investigated. Is shown, that the deposition rate grows, in comparison with (PA CVD) in 5-8 times. Is shown that the morphological characteristics of these precipitates are considerably improved.