Indium compound and method of forming an indium-containing film using the indium compound

摘要

Provided are a method for forming an indium-containing film by an ALD method at a high temperature that allows the use of an indium compound without performing a special pretreatment and enables formation of a high-throughput indium-containing film, and an indium compound used in this method. A method of forming an indium-containing film according to the present invention comprises the steps of (a) placing a substrate in a chamber; (b) introducing a gas containing an indium compound represented by the following general formula (1); (c) a first purge process; (d) introducing an oxygen-containing gas; and (e) a second purge step, wherein steps (b) to (e) are repeated at a temperature of 225° C.-400° C. or less until a desired thickness of the indium-containing film is obtained. In(C 5 R 1x H (5-x) )...(1) (Here, in the general formula (1), x is an integer of 1-5, and R 1 is each independently a hydrocarbon group having 1-8 carbon atoms.)