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Dehydrogenation treatment apparatus, dehydrogenation treatment method, and laser annealing method

机译:脱氢处理装置,脱氢处理方法及激光退火方法

摘要

PROBLEM TO BE SOLVED: To provide a dehydrogenation treatment apparatus capable of shortening a tact time in manufacturing a TFT. A substrate to be processed in which a plurality of wirings are formed in parallel with each other and an amorphous silicon film is formed on the substrate and the wirings, A dehydrogenation treatment apparatus for performing dehydrogenation treatment for desorbing hydrogen, the dehydrogenation treatment furnace accommodating the substrate to be treated and heating the substrate at the dehydrogenation treatment temperature, and applying a current to the wiring. And a current generator that generates heat to heat the wiring. [Selection diagram] Figure 2
机译:解决的问题:提供一种脱氢处理装置,其能够缩短制造TFT时的节拍时间。其中,多个配线彼此平行地形成并且在该基板和配线上形成非晶硅膜的待处理基板,用于进行用于脱氢​​的脱氢处理的脱氢处理装置,以及容纳有氢的脱氢处理炉。待处理的基板,并在脱氢处理温度下加热基板,并向布线施加电流。还有一个电流发生器,产生热量来加热布线。 [选择图]图2

著录项

  • 公开/公告号JP2020119913A

    专利类型

  • 公开/公告日2020-08-06

    原文格式PDF

  • 申请/专利权人 株式会社ブイ・テクノロジー;

    申请/专利号JP20190006891

  • 发明设计人 水村 通伸;

    申请日2019-01-18

  • 分类号H01L21/268;H01L21/20;H01L21/336;H01L29/786;

  • 国家 JP

  • 入库时间 2022-08-21 11:36:00

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