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Crystal orientation diagram generating device, charged particle beam device, crystal orientation diagram generating method and program

机译:晶体取向图生成装置,带电粒子束装置,晶体取向图生成方法及程序

摘要

FIG. 3 is a diagram illustrating a crystal coordinate system used in a charged particle beam apparatus (100) for causing a charged particle beam to be incident on a surface of a sample and representing a crystal coordinate system of a crystal at a selected position on the sample surface with respect to an incident direction of the charged particle beam. (10), an orientation information acquisition unit (1) for acquiring orientation information of a crystal at a selected position with respect to an incident direction, and an incidence for acquiring information on an incident direction of a charged particle beam with respect to a sample. The direction information acquisition unit (2), the orientation information of the crystal acquired by the orientation information acquisition unit (1), and the incidence when the orientation information of the crystal acquired by the incidence direction information acquisition unit (2) is acquired. A crystal orientation diagram generation unit (3) for generating a crystal orientation diagram in the selected incident direction at the selected position based on the information on the direction and the information on the incident direction after the change. Obtain a crystal orientation view generator (10).
机译:图。图3是示出在带电粒子束装置(100)中使用的使带电粒子束入射到样品表面上的晶体坐标系的图,并且示出了在样品的选定位置处的晶体的晶体坐标系。表面相对于带电粒子束的入射方向。 (10),方位信息获取单元(1),用于获取在相对于入射方向的选定位置处的晶体的方位信息,以及用于获取关于带电粒子束相对于样本的入射方向的信息的入射。方向信息获取部(2),由方位信息获取部(1)获取的晶体的方位信息,以及入射时由方位信息获取部(2)获取的晶体的方位信息的入射率。晶体取向图生成单元(3),用于基于关于方向的信息和关于改变之后的入射方向的信息,在所选位置处的所选入射方向上生成晶体取向图。获取晶体取向视图生成器(10)。

著录项

  • 公开/公告号JPWO2019082976A1

    专利类型

  • 公开/公告日2019-12-12

    原文格式PDF

  • 申请/专利权人 日本製鉄株式会社;

    申请/专利号JP20190508983

  • 发明设计人 網野 岳文;森 孝茂;丸山 直紀;

    申请日2018-10-25

  • 分类号G01N23/20058;G01N23/2055;G01N23/2251;G01N23/203;H01J37/22;H01J37/28;H01J37/26;

  • 国家 JP

  • 入库时间 2022-08-21 11:35:45

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