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Crystal orientation diagram generation device, charged particle beam device, crystal orientation diagram generation method and program

机译:晶体取向图生成装置,带电粒子束装置,晶体取向图生成方法及程序

摘要

A crystal orientation diagram showing a crystal coordinate system of a crystal at a selected position of the sample surface with respect to the incident direction of the charged particle beam, used in a charged particle beam device (100) for causing the charged particle beam to be incident on the surface of the sample An orientation information acquiring unit (1) for acquiring crystal orientation information at a selected position with respect to the incident direction, and an incident for acquiring information on the incident direction of the charged particle beam to the sample Incident when the crystal orientation information acquired by the direction information acquisition unit (2) and the orientation information acquisition unit (1) and the crystal orientation information acquired by the incident direction information acquisition unit (2) And a crystal orientation diagram generation unit (3) for generating a crystal orientation diagram in the incident direction after change at the selected position based on the information on the direction and the information on the incident direction after change Obtain a crystal orientation view generator (10).
机译:晶体取向图,其示出在带电粒子束装置(100)中使用的,使样品表面相对于带电粒子束的入射方向处于选定位置的晶体的晶体坐标系。入射到样品表面上的取向信息获取单元(1),用于获取相对于入射方向在选定位置处的晶体取向信息,以及用于获取与带电粒子束入射到样品上的入射方向有关的信息的入射当由方向信息获取单元(2)和方位信息获取单元(1)获取的晶体方位信息以及由入射方向信息获取单元(2)获取的晶体方位信息和晶体方位图生成单元(3)时用于在改变后在入射方向上生成晶体取向图根据改变后的方向信息和入射方向信息选择位置获得晶体取向视图生成器(10)。

著录项

  • 公开/公告号JP6521205B1

    专利类型

  • 公开/公告日2019-05-29

    原文格式PDF

  • 申请/专利权人 日本製鉄株式会社;

    申请/专利号JP20190508983

  • 发明设计人 網野 岳文;森 孝茂;丸山 直紀;

    申请日2018-10-25

  • 分类号G01N23/2251;G01N23/203;G01N23/2055;

  • 国家 JP

  • 入库时间 2022-08-21 12:19:32

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