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AMELIORATION OF GLOBAL WAFER DISTORTION BASED ON DETERMINATION OF LOCALIZED DISTORTIONS OF SEMICONDUCTOR WAFER
AMELIORATION OF GLOBAL WAFER DISTORTION BASED ON DETERMINATION OF LOCALIZED DISTORTIONS OF SEMICONDUCTOR WAFER
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机译:基于确定半导体晶片局部畸变的全球晶片畸变
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摘要
PROBLEM TO BE SOLVED: To provide amelioration of a global wafer distortion based on a determination of localized distortions of a semiconductor wafer.;SOLUTION: Disclosed herein is a technology related to amelioration (e.g., correction) of global wafer distortion based on a determination of localized distortions of a semiconductor wafer. Here, a distortion is either an out-of-plane distortion (OPD) or in-plane distortion (IPD). The reference plane for this distortion is based on the plane shared by the surface of a presumptively flat semiconductor wafer. This abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.;SELECTED DRAWING: Figure 4;COPYRIGHT: (C)2020,JPO&INPIT
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