首页> 外国专利> AMELIORATION OF GLOBAL WAFER DISTORTION BASED ON DETERMINATION OF LOCALIZED DISTORTIONS OF SEMICONDUCTOR WAFER

AMELIORATION OF GLOBAL WAFER DISTORTION BASED ON DETERMINATION OF LOCALIZED DISTORTIONS OF SEMICONDUCTOR WAFER

机译:基于确定半导体晶片局部畸变的全球晶片畸变

摘要

PROBLEM TO BE SOLVED: To provide amelioration of a global wafer distortion based on a determination of localized distortions of a semiconductor wafer.;SOLUTION: Disclosed herein is a technology related to amelioration (e.g., correction) of global wafer distortion based on a determination of localized distortions of a semiconductor wafer. Here, a distortion is either an out-of-plane distortion (OPD) or in-plane distortion (IPD). The reference plane for this distortion is based on the plane shared by the surface of a presumptively flat semiconductor wafer. This abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.;SELECTED DRAWING: Figure 4;COPYRIGHT: (C)2020,JPO&INPIT
机译:解决的问题:基于确定半导体晶片的局部变形来提供整体晶片变形的改善。;解决方案:本文公开了一种与基于确定的半导体晶片的整体晶片变形的改善(例如校正)有关的技术。半导体晶圆的局部变形。这里,失真是平面外失真(OPD)或平面内失真(IPD)。用于该变形的参考平面基于假定为平坦的半导体晶片的表面共享的平面。提交此摘要时应理解为不会用于解释或限制权利要求的范围或含义。;部分附图:图4;版权:(C)2020,JPO&INPIT

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