SIBN film for conformal hermetic dielectric encapsulation without direct RF exposure to underlying structural materials

摘要

Embodiments disclosed herein relate to a method for forming a memory device, and more particularly, to an improved method for forming a dielectric encapsulation layer over a memory material in a memory device. In one embodiment, a method includes thermally depositing a first material over a memory material at a temperature less than a temperature of a thermal budget of the memory material, and incorporating nitrogen into the first material. Exposing the first material to a nitrogen plasma and repeating the thermal deposition and nitrogen plasma steps to form a hermetic conformal dielectric encapsulation layer over the memory material. Accordingly, a memory device having a hermetic conformal dielectric encapsulation layer over the memory material is formed. [Selection] Fig. 2C