A system for quantifying unevenness caused by a laser crystallization facility using an ultraviolet light source and a method for quantifying unevenness caused by a laser crystallization facility using an ultraviolet light source

摘要

The present invention relates to Mura quantification system and method, and more specifically, to a Mura quantification system using a laser crystallization facility, in a Mura quantification system using a laser crystallization facility including a laser crystallization device, which performs crystallization of a substrate by using the laser crystallization device and includes a Mura quantification device provided inside the laser crystallization device so that the Mura quantification system quantifies Mura in real time using an ultraviolet (UV) light source while moving the crystallized substrate; and to a Mura quantification method using the laser crystallization facility. According to the present invention, the Mura quantification system acquires and quantifies only the Mura information on the substrate crystallized in the facility including the laser crystallization device, thereby obtaining reliability regarding Mura detection. Moreover, the Mura quantification system determines whether a state of the substrate is good or poor in real time, thereby contributing to stable process management.