SYSTEM FOR QUANTIFYING UNEVENNESS CAUSED BY LASER CRYSTALLIZATION FACILITY USING ULTRAVIOLET LIGHT SOURCE AND METHOD OF QUANTIFYING UNEVENNESS CAUSED BY LASER CRYSTALLIZATION FACILITY USING ULTRAVIOLET LIGHT SOURCE

摘要

PROBLEM TO BE SOLVED: To provide a system and a method of quantifying unevenness.SOLUTION: In a system for quantifying unevenness caused by a laser crystallization facility including a laser crystallization device, an unevenness qualification device is formed in the laser crystallization facility, so that crystallization of a substrate 20 is performed by a laser crystallization device and the unevenness can be qualified in real time while moving the crystallized substrate 20, by using an ultraviolet light source 220. A method for quantifying unevenness caused by a laser crystallization facility is also provided.SELECTED DRAWING: Figure 4