Method for producing modified SiC wafer, SiC wafer with epitaxial layer, method for producing the same, and surface treatment method

摘要

In the method for producing the modified SiC wafer 41 (the method for treating the surface of the SiC wafer), a method for producing the modified SiC wafer 41 whose surface has been modified by treating the unprocessed SiC wafer 40 before forming the epitaxial layer 42. , The following surface modification step is performed. That is, the pre-process SiC wafer 40 contains BPD and TED which are dislocations parallel to each other in the (0001) plane, and the portion of the surface of the pre-process SiC wafer 40 which was the BPD is the epitaxial layer 42. The properties of the surface are changed so that the rate of propagation as TED during the formation of GaN increases.