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Method for determining and regulating a diameter of a single crystal during pulling of the single crystal

机译:在单晶拉制过程中确定和调节单晶直径的方法

摘要

The diameter (dK) of a cylindrical section and of an end cone of a single crystal being pulled from a melt in a crucible, is determined by measuring the diameter (dK) of the single crystal at an interface with the melt while taking into account a lowering rate (vs) of a surface of the melt relative to the crucible, a lifting rate (vK) with which the crystal is raised relative to the crucible, and a conservation of mass, wherein a diameter of a cylindrical section of the single crystal, determined by means of observing a bright ring on the surface of the melt, and is used for a correction, a plausibility check or a comparison of the diameter (dK) of the single crystal.
机译:通过测量直径(d K 确定圆柱截面的直径(d K )和从坩埚中的熔体中拉出的单晶端锥的直径>)与熔体的界面处的单晶,同时考虑到熔体表面相对于坩埚的降低速率(v s ),提升速率(v K ),使晶体相对于坩埚上升,并且质量守恒,其中单晶圆柱截面的直径是通过观察熔体表面上的亮环而确定的;以及用于校正,合理性检查或单晶直径(d K )的比较。

著录项

  • 公开/公告号US10738392B2

    专利类型

  • 公开/公告日2020-08-11

    原文格式PDF

  • 申请/专利权人 SILTRONIC AG;

    申请/专利号US201715781850

  • 发明设计人 THOMAS SCHROECK;THOMAS AUBRUNNER;

    申请日2017-01-24

  • 分类号C30B15/10;C30B15/22;C30B15/30;C30B29/06;C30B15/20;

  • 国家 US

  • 入库时间 2022-08-21 11:31:38

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