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Diffusive memristor and device for synaptic emulator
Diffusive memristor and device for synaptic emulator
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机译:扩散性忆阻器和用于突触仿真器的设备
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摘要
A diffusive memristor device and an electronic device for emulating a biological synapse are disclosed. The diffusive memristor device includes a bottom electrode, a top electrode formed opposite the bottom electrode, and a dielectric layer disposed between the top electrode and the bottom electrode. The dielectric layer comprises silver doped silicon oxynitride (SiOxNy:Ag). In an alternate implementation, the dielectric layer comprises silver doped silicon oxide (Ag:SiO2). An electronic synapse emulation device is also disclosed. The synapse emulation device includes a diffusive memristor device, a drift memristor device connected in series with the diffusive memristor device, a first voltage pulse generator connected to the diffusive memristor device, and a second voltage pulse generator connected to the drift memristor device. Application of a signal from one of the first voltage pulse generator or the second voltage pulse generator allows the synapse emulation device to exhibit long-term plasticity.
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机译:公开了一种用于模拟生物突触的扩散忆阻器设备和电子设备。扩散忆阻器装置包括底部电极,与底部电极相对地形成的顶部电极以及设置在顶部电极和底部电极之间的介电层。介电层包括掺银的氮氧化硅(SiO x Sub> N y Sub>:Ag)。在替代实施方式中,介电层包括掺杂银的氧化硅(Ag:SiO 2 Sub>)。还公开了一种电子突触仿真设备。突触仿真装置包括:扩散忆阻器装置;与该扩散忆阻器装置串联连接的漂移忆阻器装置;连接至该扩散忆阻器装置的第一电压脉冲发生器;以及连接至该漂移忆阻器装置的第二电压脉冲发生器。来自第一电压脉冲发生器或第二电压脉冲发生器之一的信号的施加允许突触仿真设备表现出长期可塑性。
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