首页> 外国专利> Memory system capable of preventing read fail, including reading a second memory block through a dummy read operation, when an erase operation is performed to a first memory block, and operating method thereof

Memory system capable of preventing read fail, including reading a second memory block through a dummy read operation, when an erase operation is performed to a first memory block, and operating method thereof

机译:能够防止读取失败的存储系统,包括当对第一存储块执行擦除操作时通过虚拟读取操作读取第二存储块及其操作方法

摘要

A memory system includes: a memory device; and a non-erase block management device suitable for determining, when an erase operation is performed on a first memory block included in the memory device, whether to perform a read operation on a second word line of a second memory block, according to a location of a first word line, which is a target word line for a read operation on the second memory block, wherein the second word line includes a target word line for a dummy read operation.
机译:一种存储系统,包括:存储设备;一种非擦除块管理装置,适于根据位置确定在对存储装置中包括的第一存储块执行擦除操作时是否对第二存储块的第二字线执行读取操作第一字线的第一字线是用于第二存储块上的读取操作的目标字线,其中第二字线包括用于伪读取操作的目标字线。

著录项

  • 公开/公告号US10777285B2

    专利类型

  • 公开/公告日2020-09-15

    原文格式PDF

  • 申请/专利权人 SK HYNIX INC.;

    申请/专利号US201816121147

  • 发明设计人 WON-JIN JUNG;KEUN-WOO LEE;

    申请日2018-09-04

  • 分类号G11C16/28;G11C16/16;G11C16/34;G11C11/56;G11C16/04;

  • 国家 US

  • 入库时间 2022-08-21 11:30:57

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