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Technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser
Technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser
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机译:太赫兹磁能激光器在磁隧道结型存储器中基于操纵钉扎层的高速磁记录技术
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摘要
An apparatus for novel technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser is provided. The apparatus comprises a terahertz writing head configured to generate a tunable terahertz writing signal and a memory cell including a spacer that comprises a thickness configured based on Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. The memory cell comprises two separate memory states: a first binary state and a second binary state; wherein the first binary memory state corresponds to a ferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a first thickness value of the spacer; and wherein the second binary memory state corresponds to an antiferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a second thickness value of the spacer. The thickness of the spacer is manipulated by the tunable terahertz writing signal.
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