首页>
外国专利>
Power MOSFET with metal filled deep source contact
Power MOSFET with metal filled deep source contact
展开▼
机译:带有金属填充深源触点的功率MOSFET
展开▼
页面导航
摘要
著录项
相似文献
摘要
A planar gate power MOSFET includes a substrate having a semiconductor surface doped a first conductivity type, a plurality of transistor cells (cells) including a first cell and at least a second cell each having a gate stack over a body region. A trench has an aspect ratio of 3 extending down from a top side of the semiconductor surface between the gate stacks providing a source contact (SCT) from a source doped a second conductivity type to the substrate. A field plate (FP) is over the gate stacks that provides a liner for the trench. The trench has a refractory metal or platinum-group metal (PGM) metal filler within. A drain doped the second conductivity type is in the semiconductor surface on a side of the gate stacks opposite the trench.
展开▼