Method for cleaning, passivation and functionalization of Siamp;#x2014;Ge semiconductor surfaces

摘要

A method for in-situ dry cleaning of a SiGe semiconductor surface, ex-situ degreases the Ge containing semiconductor surface and removes organic contaminants. The surface is then dosed with HF (aq) or NH₄F (g) generated via NH₃+NH or NF₃ with H₂ or H₂O to remove oxygen containing contaminants. In-situ dosing of the SiGe surface with atomic H removes carbon containing contaminants.