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Chip design method of optimizing circuit performance according to change in PVT operation conditions

机译:根据PVT工作条件的变化优化电路性能的芯片设计方法

摘要

A method of designing a chip having an integrated circuit is provided. The method includes obtaining delta cell delays and delta net delays according to a process, voltage, and temperature (PVT) corner change with respect to a plurality of cells and a plurality of nets forming the integrated circuit; analyzing sensitivity with respect to a delay according to the PVT corner change of a plurality of paths in the integrated circuit, by using the delta cell delays and the delta net delays; determining N-number of sensitivity-critical paths among the plurality of paths based on a result of the analysis, wherein N is an integer greater than or equal to 0; and performing an engineering change order (ECO) based on a result of the determination.
机译:提供一种设计具有集成电路的芯片的方法。该方法包括:根据相对于形成集成电路的多个单元和多个网络的过程,电压和温度(PVT)拐角变化,获得Δ单元延迟和Δ净延迟。通过使用德尔塔单元延迟和德尔塔净延迟,根据集成电路中多个路径的PVT拐角变化来分析关于延迟的灵敏度;根据分析结果,确定所述多条路径中的N条敏感性关键路径,其中,N为大于等于0的整数;并基于确定结果执行工程变更单(ECO)。

著录项

  • 公开/公告号US10796054B2

    专利类型

  • 公开/公告日2020-10-06

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号US201916260890

  • 发明设计人 JI-YOUN KIM;EUN-JU HWANG;

    申请日2019-01-29

  • 分类号G06F17/50;G06F30/39;G06F30/3312;G06F119/12;

  • 国家 US

  • 入库时间 2022-08-21 11:28:04

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